Electronic structure of a photoluminescent center in silver-doped silicon

Abstract

In silver-doped silicon, a photoluminescence band is observed with zero-phonon lines at 778.92, 779.85, and 784.31 meV, which is concluded to be associated with the spin-triplet and spin-singlet states of a bound exciton. The photoluminescence excitation spectrum of this defect, with the transitions to s-like electronic excited states dominating, is measured using Fourier-transform techniques. The electronic structure of this defect, which is known in the literature as the deep ${\mathit{E}}_{\mathit{v}}$+0.34 eV silver donor, is well described by the pseudodonor model.