Electronic Properties of Silicon Doped with Silver

Abstract

A study of the electronic properties of bulk silicon doped with silver is described. It is shown that silver has a singly ionizable donor level 0.26 eV above the valence band edge, and a singly ionizable acceptor level 0.29 eV below the conduction band edge, in variance with previously published data. The effects of large concentrations of silver upon carrier mobilities are also explored. Measurements of the capture probabilities of the various silver charge states are described and the results compared to those for gold in silicon.