Shallow defect etching of GaAs using AB solution under laser illumination

A. Muñoz-Yagüe; Marise Bafleur

doi:10.1016/0022-0248(81)90071-3

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Shallow defect etching of GaAs using AB solution under laser illumination

A. Muñoz-Yagüe Marise Bafleur

Year: 1981 Journal: Journal of Crystal Growth Vol: 53 (2)Pages: 239-248 Publisher: Elsevier BV

DOI: 10.1016/0022-0248(81)90071-3

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Keywords:

Etching (microfabrication) Epitaxy Etch pit density Optoelectronics Laser Materials science Optics Contrast (vision) White light Nanotechnology Layer (electronics) Physics

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Metal and Thin Film Mechanics

Physical Sciences → Engineering → Mechanics of Materials

Advanced Surface Polishing Techniques

Physical Sciences → Engineering → Biomedical Engineering

Shallow defect etching of GaAs using AB solution under laser illumination

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