Donor Reactivation In Plasma-Irradiated GaAs Under Laser Illumination

Kazumi Wada; Hideo Nakanishi

doi:10.1557/proc-442-69

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Donor Reactivation In Plasma-Irradiated GaAs Under Laser Illumination

Kazumi Wada Hideo Nakanishi

Year: 1996 Journal: MRS Proceedings Vol: 442 Publisher: Cambridge University Press

DOI: 10.1557/proc-442-69

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Keywords:

Materials science Plasma Irradiation Laser Crystallographic defect Annealing (glass) Penetration depth Optoelectronics Penetration (warfare) Atomic physics Optics Condensed matter physics Nuclear physics Physics

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Plasma Diagnostics and Applications

Physical Sciences → Engineering → Electrical and Electronic Engineering

Atomic and Molecular Physics

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Muon and positron interactions and applications

Physical Sciences → Engineering → Mechanics of Materials

Donor Reactivation In Plasma-Irradiated GaAs Under Laser Illumination

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