Photodissolution of n-GaAs electrodes under laser illumination: control of the etching profile

Isabelle Gérard; Nathalie Simon; Jackie Vigneron; C. Mathieu; Arnaud Etchéberry

doi:10.1088/0268-1242/16/4/306

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Photodissolution of n-GaAs electrodes under laser illumination: control of the etching profile

Isabelle Gérard Nathalie Simon Jackie Vigneron C. Mathieu Arnaud Etchéberry

Year: 2001 Journal: Semiconductor Science and Technology Vol: 16 (4)Pages: 222-226 Publisher: IOP Publishing

DOI: 10.1088/0268-1242/16/4/306

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Abstract

International audience

Keywords:

Photocurrent Etching (microfabrication) Laser Chemistry Optoelectronics Isotropic etching Electrode Polarization (electrochemistry) Photoconductivity Materials science Optics Analytical Chemistry (journal) Layer (electronics) Nanotechnology

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Laser Material Processing Techniques

Physical Sciences → Engineering → Computational Mechanics

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Laser Design and Applications

Physical Sciences → Engineering → Electrical and Electronic Engineering

Photodissolution of n-GaAs electrodes under laser illumination: control of the etching profile

Abstract

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