Diffusion of Si Adatoms on H-Terminated Si(001) Surfaces

Takahisa Ohno; Jun Nara; Taizô Sasaki

doi:10.1557/proc-492-275

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Diffusion of Si Adatoms on H-Terminated Si(001) Surfaces

Takahisa Ohno Jun Nara Taizô Sasaki

Year: 1997 Journal: MRS Proceedings Vol: 492 Publisher: Cambridge University Press

DOI: 10.1557/proc-492-275

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Keywords:

Materials science Dimer Diffusion Atom (system on chip) Hydrogen Silicon Chemical physics Adsorption Surface diffusion Surface (topology) Crystallography Physical chemistry Optoelectronics Thermodynamics Nuclear magnetic resonance Chemistry

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon Nanostructures and Photoluminescence

Physical Sciences → Materials Science → Materials Chemistry

Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Diffusion of Si Adatoms on H-Terminated Si(001) Surfaces

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