Diffusion and adsorption behavior of Si adatom on defect-induced H-terminated Si(001) surfaces

Xiaoyan Zhu; Xiaoqing Huang

doi:10.1016/j.physb.2007.07.024

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Diffusion and adsorption behavior of Si adatom on defect-induced H-terminated Si(001) surfaces

Xiaoyan Zhu Xiaoqing Huang

Year: 2007 Journal: Physica B Condensed Matter Vol: 400 (1-2)Pages: 287-291 Publisher: Elsevier BV

DOI: 10.1016/j.physb.2007.07.024

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Keywords:

Adsorption Diffusion Vacancy defect Materials science Dimer Surface diffusion Chemical physics Binding energy Silicon Surface (topology) Crystallography Physical chemistry Chemistry Thermodynamics Atomic physics Optoelectronics Organic chemistry

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Diffusion and adsorption behavior of Si adatom on defect-induced H-terminated Si(001) surfaces

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