JOURNAL ARTICLE
H Segregation by Adatoms on Hydrogen-Terminated Semiconductor Surfaces
Year: 2008 Journal: Journal of the Korean Physical Society Vol: 53 (2)Pages: 685-690 Publisher: Springer Science+Business Media
Keywords:
Semiconductor Materials science Hydrogen Chemical physics Nanotechnology Condensed matter physics Optoelectronics Physics Quantum mechanics
Metrics
0
Cited By
0.00
FWCI (Field Weighted Citation Impact)
0
Refs
0.10
Citation Normalized Percentile
Is in top 1%
Is in top 10%
Topics
Advanced Data Storage Technologies
Physical Sciences → Computer Science → Computer Networks and Communications
Related Documents
JOURNAL ARTICLE
Surface Chemistry of Hydrogen-terminated Semiconductor Surfaces
Journal: ECS Meeting Abstracts Year: 2006 Vol: MA2005-02 (9)Pages: 396-396
JOURNAL ARTICLE
Hydrogen-terminated Si Surfaces. Formation of Hydrogen Terminated Silicon Surfaces.
Yukinori MoritaHiroshi Tokumoto
Journal: Hyomen Kagaku Year: 1999 Vol: 20 (10)Pages: 680-684
JOURNAL ARTICLE
Hydrogen-terminated Si Surfaces. Structure and Dynamics of Hydrogen-terminated Si Surfaces.
Katsunori TagamiMasaru Tsukada
Journal: Hyomen Kagaku Year: 1999 Vol: 20 (10)Pages: 685-689
JOURNAL ARTICLE
Diffusion of Si Adatoms on H-Terminated Si(001) Surfaces
Takahisa OhnoJun NaraTaizô Sasaki
Journal: MRS Proceedings Year: 1997 Vol: 492
JOURNAL ARTICLE
Infrared spectroscopy of semiconductor surfaces: H-terminated silicon surfaces
Journal: Journal of Molecular Structure Year: 1993 Vol: 292 Pages: 65-80