Heteroepitaxy of InSb films grown on a Si(001) substrate with AlSb buffer layer

M. Mori; Naoki Fujimoto; N. Akae; K. Uotani; T. Tambo; C. Tatsuyama

doi:10.1016/j.jcrysgro.2005.10.011

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Heteroepitaxy of InSb films grown on a Si(001) substrate with AlSb buffer layer

M. Mori Naoki Fujimoto N. Akae K. Uotani T. Tambo C. Tatsuyama

Year: 2005 Journal: Journal of Crystal Growth Vol: 286 (2)Pages: 218-222 Publisher: Elsevier BV

DOI: 10.1016/j.jcrysgro.2005.10.011

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Keywords:

Auger electron spectroscopy Substrate (aquarium) Antimony Layer (electronics) Indium Evaporation Materials science Crystal (programming language) Crystal growth Analytical Chemistry (journal) Thin film Single crystal Vacuum evaporation Crystallography Chemistry Optoelectronics Nanotechnology Metallurgy

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Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Advanced Semiconductor Detectors and Materials

Physical Sciences → Engineering → Electrical and Electronic Engineering

Nanowire Synthesis and Applications

Physical Sciences → Engineering → Biomedical Engineering

Heteroepitaxy of InSb films grown on a Si(001) substrate with AlSb buffer layer

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