Crystal orientations of InSb films grown on a Si(111) substrate by inserting AlSb buffer layer

Abstract

Abstract The heteroepitaxial growth of InSb film via AlSb buffer layer on a Si(111) substrate was performed in an ultra high vacuum. The grown InSb films were characterized by X‐ray diffraction and atomic force microscopy. XRD patterns (ϕ‐scan) of the samples showed different epitaxial relationship between InSb/Si and InSb/AlSb/Si. It is found that surface condition has a significant influence on the growth of InSb films and the surface of InSb films became rough due to the high mixture ratio of domains. The two‐step growth procedure was also tried to further improve the crystal quality of the InSb films. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)