Effect of AlSb buffer layer thickness on heteroepitaxial growth of InSb films on a Si(001) substrate

M. Mori; K. Murata; Naoki Fujimoto; C. Tatsuyama; T. Tambo

doi:10.1016/j.tsf.2007.04.042

ScienceGate Book Chapters

JOURNAL ARTICLE

Effect of AlSb buffer layer thickness on heteroepitaxial growth of InSb films on a Si(001) substrate

M. Mori K. Murata Naoki Fujimoto C. Tatsuyama T. Tambo

Year: 2007 Journal: Thin Solid Films Vol: 515 (20-21)Pages: 7861-7865 Publisher: Elsevier BV

DOI: 10.1016/j.tsf.2007.04.042

Get Full-Text PDF Get Analytical Report

Keywords:

Layer (electronics) Materials science Substrate (aquarium) Antimonide Buffer (optical fiber) Epitaxy Optoelectronics Thin film Molecular beam epitaxy Diffraction Crystallography Optics Nanotechnology Chemistry Electrical engineering

Metrics

Cited By

0.65

FWCI (Field Weighted Citation Impact)

Refs

0.68

Citation Normalized Percentile

Is in top 1%

Is in top 10%

Citation History

Topics

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Photonic and Optical Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Effect of AlSb buffer layer thickness on heteroepitaxial growth of InSb films on a Si(001) substrate

Metrics

Citation History

Topics

Related Documents

Heteroepitaxial growth of InSb films on a Si(0 0 1) substrate via AlSb buffer layer

Heteroepitaxy of InSb films grown on a Si(001) substrate with AlSb buffer layer

Heteroepitaxial growth of InSb films on the patterned Si(001) substrate

Heteroepitaxial Growth of InSb Films on V-Grooved Si(001) Substrate

Growth of InSb films on a Si(001) substrate with Ge buffer layer