Growth of InSb films on a Si(001) substrate with Ge buffer layer

M. Mori; Y. Tsubosaki; T. Tambo; H. Ueba; C. Tatsuyama

doi:10.1016/s0169-4332(97)80134-1

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Growth of InSb films on a Si(001) substrate with Ge buffer layer

M. Mori Y. Tsubosaki T. Tambo H. Ueba C. Tatsuyama

Year: 1997 Journal: Applied Surface Science Vol: 117-118 Pages: 512-517 Publisher: Elsevier BV

DOI: 10.1016/s0169-4332(97)80134-1

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Keywords:

Layer (electronics) Substrate (aquarium) Buffer (optical fiber) Materials science Optoelectronics Engineering physics Nanotechnology Computer science Physics Telecommunications

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Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Photonic and Optical Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Nanowire Synthesis and Applications

Physical Sciences → Engineering → Biomedical Engineering

Growth of InSb films on a Si(001) substrate with Ge buffer layer

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