CMOS compatible polycrystalline silicon–germanium based pressure sensors

Pilar Gonzalez; Bin Guo; Michał Rakowski; K. De Meyer; Ann Witvrouw

doi:10.1016/j.sna.2011.12.018

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CMOS compatible polycrystalline silicon–germanium based pressure sensors

Pilar Gonzalez Bin Guo Michał Rakowski K. De Meyer Ann Witvrouw

Year: 2011 Journal: Sensors and Actuators A Physical Vol: 188 Pages: 9-18 Publisher: Elsevier BV

DOI: 10.1016/j.sna.2011.12.018

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Keywords:

Materials science Annealing (glass) Piezoresistive effect CMOS Fabrication Optoelectronics Polycrystalline silicon Pressure sensor Capacitive sensing Transistor Silicon Electrical engineering Thin-film transistor Electronic engineering Nanotechnology Metallurgy Mechanical engineering Engineering

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Advanced MEMS and NEMS Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Advanced Sensor and Energy Harvesting Materials

Physical Sciences → Engineering → Biomedical Engineering

Nanowire Synthesis and Applications

Physical Sciences → Engineering → Biomedical Engineering

CMOS compatible polycrystalline silicon–germanium based pressure sensors

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