HfO2 etching mechanism in inductively-coupled Cl2/Ar plasma

Moonkeun Kim; Alexander Efremov; Hyun‐Woo Lee; Hyung‐Ho Park; MunPyo Hong; Nam Ki Min; Kwang‐Ho Kwon

doi:10.1016/j.tsf.2011.04.059

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HfO2 etching mechanism in inductively-coupled Cl2/Ar plasma

Moonkeun Kim Alexander Efremov Hyun‐Woo Lee Hyung‐Ho Park MunPyo Hong Nam Ki Min Kwang‐Ho Kwon

Year: 2011 Journal: Thin Solid Films Vol: 519 (20)Pages: 6708-6711 Publisher: Elsevier BV

DOI: 10.1016/j.tsf.2011.04.059

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Keywords:

Etching (microfabrication) Analytical Chemistry (journal) Chemistry Inductively coupled plasma Plasma Langmuir probe Photoresist Quadrupole mass analyzer Thin film Argon Reactive-ion etching Torr Ion Materials science Mass spectrometry Layer (electronics) Plasma diagnostics Nanotechnology Chromatography

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Plasma Diagnostics and Applications

Physical Sciences → Engineering → Electrical and Electronic Engineering

Metal and Thin Film Mechanics

Physical Sciences → Engineering → Mechanics of Materials

HfO2 etching mechanism in inductively-coupled Cl2/Ar plasma

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