Etching mechanism of MgO thin films in inductively coupled Cl2∕Ar plasma

Abstract

The etching mechanism of MgO thin films in Cl2∕Ar plasma was investigated. It was found that the increasing Ar in the mixing ratio of Cl2∕Ar plasma causes nonmonotonic MgO etch rate, which reaches a maximum value at 70%Ar+30%Cl2. Langmuir probe measurement showed the noticeable influence of Cl2∕Ar mixing ratio on electron temperature and electron density. The zero-dimensional plasma model indicated monotonic changes of both densities and fluxes of active species. At the same time, analyses of surface kinetics showed the possibility of nonmonotonic etch rate behavior due to the concurrence of physical and chemical pathways in ion-assisted chemical reaction.