Etching mechanism of Bi4−xLaxTi3O12 films in Ar/Cl2 inductively coupled plasma

Dong‐Pyo Kim; Kyoung‐Tae Kim; Chang-Il Kim; Alexander Efremov

doi:10.1016/s0040-6090(03)01115-5

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Etching mechanism of Bi4−xLaxTi3O12 films in Ar/Cl2 inductively coupled plasma

Dong‐Pyo Kim Kyoung‐Tae Kim Chang-Il Kim Alexander Efremov

Year: 2003 Journal: Thin Solid Films Vol: 447-448 Pages: 343-348 Publisher: Elsevier BV

DOI: 10.1016/s0040-6090(03)01115-5

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Keywords:

X-ray photoelectron spectroscopy Etching (microfabrication) Analytical Chemistry (journal) Chemistry Sputtering Inductively coupled plasma Langmuir probe Plasma Ion Thin film Plasma diagnostics Materials science Layer (electronics) Nanotechnology Nuclear magnetic resonance

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Electronic and Structural Properties of Oxides

Physical Sciences → Materials Science → Materials Chemistry

Ferroelectric and Piezoelectric Materials

Physical Sciences → Materials Science → Materials Chemistry

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Etching mechanism of Bi4−xLaxTi3O12 films in Ar/Cl2 inductively coupled plasma

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