JOURNAL ARTICLE
Controlled fabrication of InGaAs quantum dots by selective area epitaxy MOCVD growth
V.C. ElardeT.S. YeohRadhika RangarajanJ. J. Coleman
Year: 2004 Journal: Journal of Crystal Growth Vol: 272 (1-4)Pages: 148-153 Publisher: Elsevier BV
Keywords:
Quantum dot Metalorganic vapour phase epitaxy Optoelectronics Molecular beam epitaxy Materials science Fabrication Lithography Nanotechnology Electron-beam lithography Epitaxy Layer (electronics) Thin film Chemical beam epitaxy Indium gallium arsenide Gallium arsenide Resist
Metrics
25
Cited By
1.47
FWCI (Field Weighted Citation Impact)
24
Refs
0.82
Citation Normalized Percentile
Is in top 1%
Is in top 10%
Citation History
Topics
Semiconductor Quantum Structures and Devices
Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics
Semiconductor Lasers and Optical Devices
Physical Sciences → Engineering → Electrical and Electronic Engineering
Quantum Dots Synthesis And Properties
Physical Sciences → Materials Science → Materials Chemistry
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Journal: Japanese Journal of Applied Physics Year: 2000 Vol: 39 (4S)Pages: 2344-2344