Fabrication of InGaAs Strained Quantum Wire Structures Using Selective Area MOCVD Growth

Taro Arakawa; Shiro Tsukamoto; Y. Nagamune; M. Nishioka; T. Kono; J. Lee; Yasuhiko Arakawa

doi:10.7567/ssdm.1993.s-v-9

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Fabrication of InGaAs Strained Quantum Wire Structures Using Selective Area MOCVD Growth

Taro Arakawa Shiro Tsukamoto Y. Nagamune M. Nishioka T. Kono J. Lee Yasuhiko Arakawa

Year: 1993

DOI: 10.7567/ssdm.1993.s-v-9

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Keywords:

Metalorganic vapour phase epitaxy Materials science Fabrication Optoelectronics Quantum wire Gallium arsenide Indium gallium arsenide Quantum Nanotechnology Epitaxy Physics

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Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Semiconductor Lasers and Optical Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Fabrication of InGaAs Strained Quantum Wire Structures Using Selective Area MOCVD Growth

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