Fabrication of InGaAs Strained Quantum Wire Structures Using Selective-Area Metal-Organic Chemical Vapor Deposition Growth

Abstract

We fabricated In x Ga 1- x As strained quantum wire structures with various In compositions using a selective-area metal-organic chemical vapor deposition growth technique. Photoluminescence (PL) measurements at 14 K demonstrated that strained quantum wires of high quality were obtained when x is less than 0.35. Change of the full width at half-maximum of the PL peaks indicates that the structural dimensions of the quantum wires exceeded the critical thickness at around x =0.4.