Controlled growth of InGaAs/InGaAsP/InP Quantum Dots using diblock copolymer lithography and selective area MOCVD growth

L. J. Mawst; J. H. Park; Jeremy Kirch; Chenxun Liu; M. K. Rathi; Paul F. Nealey; T. F. Kuechb

doi:10.1109/leos.2009.5343359

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Controlled growth of InGaAs/InGaAsP/InP Quantum Dots using diblock copolymer lithography and selective area MOCVD growth

L. J. Mawst J. H. Park Jeremy Kirch Chenxun Liu M. K. Rathi Paul F. Nealey T. F. Kuechb

Year: 2009 Vol: 3 Pages: 739-740

DOI: 10.1109/leos.2009.5343359

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Abstract

Diblock copolymer nanopatterning and selective growth is utilized to produce InGaAsP/In _0.53 Ga _0.47 As/InGaAsP Quantum Dots on InP substrates, demonstrating RTPL near 1.6 mum. Electroluminescence near 1.25 mum is achieved from ridge-waveguide devices.

Keywords:

Electroluminescence Metalorganic vapour phase epitaxy Lithography Materials science Copolymer Optoelectronics Quantum dot Gallium arsenide Ridge Epitaxy Nanotechnology Polymer

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Nanowire Synthesis and Applications

Physical Sciences → Engineering → Biomedical Engineering

Quantum Dots Synthesis And Properties

Physical Sciences → Materials Science → Materials Chemistry

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Controlled growth of InGaAs/InGaAsP/InP Quantum Dots using diblock copolymer lithography and selective area MOCVD growth

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