Area-Controlled Growth of InAs Quantum Dots by Selective MOCVD

Abstract

A technique to control the location of quantum dot growth is required to avoid optical absorption and attain high reflectivity in fabricating quantum dot lasers with photonic crystal reflectors in the same growth plane as the active layer. In this paper, we demonstrate a novel scheme for area-controlled growth of quantum dots using selective metal organic chemical vapor deposition (MOCVD). Using this technique, the deposition of material within mask windows can be controlled by varying the width of the SiO2 mask. By optimizing the growth conditions and mask pattern, a high density (2.4×1011/cm2) of quantum dots was formed selectively only in the active layer of a laser structure, while no quantum dots were formed in the reflector region.