Palladium and Aluminum Gate Metals/Aluminum Nitride/Silicon Balanced Capacitors for Selective Hydrogen Sensing

Haripriya E. Prakasam; F. Serina; Chaoqun Huang; Gregory W. Auner; L. Rimai; K. Y. Simon Ng; R. Naik

doi:10.1557/proc-693-i11.27.1

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Palladium and Aluminum Gate Metals/Aluminum Nitride/Silicon Balanced Capacitors for Selective Hydrogen Sensing

Haripriya E. Prakasam F. Serina Chaoqun Huang Gregory W. Auner L. Rimai K. Y. Simon Ng R. Naik

Year: 2001 Journal: MRS Proceedings Vol: 693 Publisher: Cambridge University Press

DOI: 10.1557/proc-693-i11.27.1

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Keywords:

Materials science Hydrogen Optoelectronics Capacitor Palladium Aluminium Sputter deposition Nitride Silicon Electrode Molecular beam epitaxy Sputtering Capacitance Epitaxy Thin film Voltage Nanotechnology Catalysis Metallurgy Layer (electronics) Electrical engineering

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Gas Sensing Nanomaterials and Sensors

Physical Sciences → Engineering → Electrical and Electronic Engineering

Palladium and Aluminum Gate Metals/Aluminum Nitride/Silicon Balanced Capacitors for Selective Hydrogen Sensing

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