Thermal bias annealing experiments on aluminum/silicon nitride/hydrogenated amorphous silicon top gate structures

F. Dayoub; Jean‐Paul Kleider; Christophe Longeaud; D. Mencaraglia; J. L. Reynaud

doi:10.1016/0022-3093(95)00695-8

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Thermal bias annealing experiments on aluminum/silicon nitride/hydrogenated amorphous silicon top gate structures

F. Dayoub Jean‐Paul Kleider Christophe Longeaud D. Mencaraglia J. L. Reynaud

Year: 1996 Journal: Journal of Non-Crystalline Solids Vol: 198-200 Pages: 318-321 Publisher: Elsevier BV

DOI: 10.1016/0022-3093(95)00695-8

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Keywords:

Materials science Quasistatic process Amorphous silicon Annealing (glass) Silicon Capacitance Biasing Nitride Amorphous solid Condensed matter physics Silicon nitride Nanocrystalline silicon Optoelectronics Composite material Voltage Crystalline silicon Crystallography Thermodynamics Chemistry Electrical engineering Physics Layer (electronics)

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Advancements in Semiconductor Devices and Circuit Design

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Thermal bias annealing experiments on aluminum/silicon nitride/hydrogenated amorphous silicon top gate structures

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