Bias Stress Induced Instabilities in Amorphous Silicon Nitride / Crystalline Silicon and Amorphous Silicon Nitride / Amorphous Silicon Structures

Jerzy Kanicki; C. Godet; A. V. Gelatos

doi:10.1557/proc-219-45

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Bias Stress Induced Instabilities in Amorphous Silicon Nitride / Crystalline Silicon and Amorphous Silicon Nitride / Amorphous Silicon Structures

Jerzy Kanicki C. Godet A. V. Gelatos

Year: 1991 Journal: MRS Proceedings Vol: 219 Publisher: Cambridge University Press

DOI: 10.1557/proc-219-45

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Keywords:

Materials science Dangling bond Nanocrystalline silicon Amorphous silicon Silicon nitride Amorphous solid Silicon Stress (linguistics) Nitride Strained silicon Optoelectronics Crystalline silicon Composite material Crystallography Chemistry Layer (electronics)

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Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon Nanostructures and Photoluminescence

Physical Sciences → Materials Science → Materials Chemistry

Bias Stress Induced Instabilities in Amorphous Silicon Nitride / Crystalline Silicon and Amorphous Silicon Nitride / Amorphous Silicon Structures

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