Strained InGaAs(P)/InP multi-quantum well structures grown by chemical-beam epitaxy

Deok Ha Woo; Myoung‐Kyu Oh; Eui-Kwan Koh; J. S. Yahng; Sunghoon Kim; Young Dong Kim

doi:10.1016/s0167-9317(99)00470-0

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Strained InGaAs(P)/InP multi-quantum well structures grown by chemical-beam epitaxy

Deok Ha Woo Myoung‐Kyu Oh Eui-Kwan Koh J. S. Yahng Sunghoon Kim Young Dong Kim

Year: 2000 Journal: Microelectronic Engineering Vol: 51-52 Pages: 171-179 Publisher: Elsevier BV

DOI: 10.1016/s0167-9317(99)00470-0

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Keywords:

Chemical beam epitaxy Molecular beam epitaxy Ternary operation Photoluminescence Materials science Transmission electron microscopy Diffraction Optoelectronics Epitaxy Perpendicular Quantum well Layer (electronics) Optics Nanotechnology Laser Geometry Physics

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Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Advanced Semiconductor Detectors and Materials

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Strained InGaAs(P)/InP multi-quantum well structures grown by chemical-beam epitaxy

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