InGaAs/InP strained layer quantum wells grown by molecular beam epitaxy

S. Loualiche; Alain Le Corre; A. Godefroy; Fabrice Clérot; D. Lecrosnier; A. Poudoulec; S. Saläun

doi:10.1016/0022-0248(93)90617-6

ScienceGate Book Chapters

JOURNAL ARTICLE

InGaAs/InP strained layer quantum wells grown by molecular beam epitaxy

S. Loualiche Alain Le Corre A. Godefroy Fabrice Clérot D. Lecrosnier A. Poudoulec S. Saläun

Year: 1993 Journal: Journal of Crystal Growth Vol: 127 (1-4)Pages: 258-260 Publisher: Elsevier BV

DOI: 10.1016/0022-0248(93)90617-6

Get Full-Text PDF Get Analytical Report

Keywords:

Molecular beam epitaxy Heterojunction Superlattice Optoelectronics Quantum well Materials science Substrate (aquarium) Photoluminescence Layer (electronics) Epitaxy Optics Nanotechnology Laser Geology Physics

Metrics

Cited By

0.92

FWCI (Field Weighted Citation Impact)

Refs

0.77

Citation Normalized Percentile

Is in top 1%

Is in top 10%

Topics

Semiconductor Lasers and Optical Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

InGaAs/InP strained layer quantum wells grown by molecular beam epitaxy

Metrics

Topics

Related Documents

GaInAs/InP Quantum Wells and Strained-Layer Superlattices Grown by Chemical Beam Epitaxy

Indium desorption from strained InGaAs/GaAs quantum wells grown by molecular beam epitaxy

Lateral thickness modulation of InGaAs/InP quantum wells grown by metalorganic molecular beam epitaxy

Long‐wavelength strained‐layer InGaAs/GaAs quantum‐well lasers grown by molecular beam epitaxy

Improved photoluminescence properties of highly strained InGaAs/GaAs quantum wells grown by molecular-beam epitaxy