JOURNAL ARTICLE

InGaAs/InP strained layer quantum wells grown by molecular beam epitaxy

Keywords:
Molecular beam epitaxy Heterojunction Superlattice Optoelectronics Quantum well Materials science Substrate (aquarium) Photoluminescence Layer (electronics) Epitaxy Optics Nanotechnology Laser Geology Physics

Metrics

3
Cited By
0.92
FWCI (Field Weighted Citation Impact)
11
Refs
0.77
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Topics

Semiconductor Lasers and Optical Devices
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Semiconductor Quantum Structures and Devices
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics

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