GaInAs/InP Quantum Wells and Strained-Layer Superlattices Grown by Chemical Beam Epitaxy

Abstract

Ga x In 1- x As/InP (0.2≤ x ≤0.47) quantum wells were grown by chemical beam epitaxy. The thinnest well of two monolayers was obtained and confirmed by transmission electron microscope. Room temperature photoluminescence emission was observed from two-monolayer quantum wells which peaked at 1.0 µm. Strained quantum wells were grown with successive well thickness from 9 Å to 60 Å. By optimizing the growth sequence, we obtained a photoluminescence linewidth of 15 meV from 20 Å to 60 Å wells at 77 K.