Long-wavelength strained-layer InAs/GaInAs single-quantum-well laser grown by molecular beam epitaxy on InP substrate

Abstract

Laser emission is reported for the first time from a 10 monolayer-wide highly strained (3.2%) InAs single quantum well confined by Ga0.47In0.53As layers. At 80 K. the emission spectrum of broad-area laser diodes is centred at 1.836 μm, the threshold current-density is ~500 A/cm2 and the characteristic temperature is T0 > 30 K. CW operation is achieved up to 110 K with narrow-stripe devices but at shorter wavelength, due to increased losses and filling of the quantumwell energy levels.