JOURNAL ARTICLE

InGaAs/InP quantum wires selectively grown by chemical beam epitaxy

Toshio NishidaHideo SugiuraMasaya NotomiToshiaki Tamamura

Year: 1993 Journal:   Journal of Crystal Growth Vol: 132 (1-2)Pages: 91-98   Publisher: Elsevier BV
Keywords:
Chemical beam epitaxy Photoluminescence Molecular beam epitaxy Optoelectronics Electron-beam lithography Materials science Substrate (aquarium) Lithography Epitaxy Facet (psychology) Quantum well Blueshift Optics Photolithography Resist Nanotechnology Laser Layer (electronics)

Metrics

9
Cited By
0.69
FWCI (Field Weighted Citation Impact)
13
Refs
0.65
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Topics

Semiconductor Quantum Structures and Devices
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics
Semiconductor Lasers and Optical Devices
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Nanowire Synthesis and Applications
Physical Sciences →  Engineering →  Biomedical Engineering

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