InGaAs/InP quantum wires selectively grown by chemical beam epitaxy

Toshio Nishida; Hideo Sugiura; Masaya Notomi; Toshiaki Tamamura

doi:10.1016/0022-0248(93)90250-z

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InGaAs/InP quantum wires selectively grown by chemical beam epitaxy

Toshio Nishida Hideo Sugiura Masaya Notomi Toshiaki Tamamura

Year: 1993 Journal: Journal of Crystal Growth Vol: 132 (1-2)Pages: 91-98 Publisher: Elsevier BV

DOI: 10.1016/0022-0248(93)90250-z

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Keywords:

Chemical beam epitaxy Photoluminescence Molecular beam epitaxy Optoelectronics Electron-beam lithography Materials science Substrate (aquarium) Lithography Epitaxy Facet (psychology) Quantum well Blueshift Optics Photolithography Resist Nanotechnology Laser Layer (electronics)

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Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Semiconductor Lasers and Optical Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Nanowire Synthesis and Applications

Physical Sciences → Engineering → Biomedical Engineering

InGaAs/InP quantum wires selectively grown by chemical beam epitaxy

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