InGaAs/InP hot electron transistors grown by chemical beam epitaxy

Abstract

In this letter, we report on the dc performance of chemical beam epitaxy grown InGaAs/InP hot electron transistors (HETs). The highest observed differential β (dIC/dIB) is over 100. The HETs have Pd/Ge/Ti/Al shallow ohmic base contacts with diffusion lengths less than 300 Å. Furthermore, we also demonstrated ballistic transport of electrons in an InGaAs/InP HET by obtaining an energy distribution of electrons with ∼60 meV full width at half maximum. The measured conduction band discontinuity of InGaAs/InP is 250.3 meV, which is 39.8% of the band gap difference.