JOURNAL ARTICLE

Deep levels in Ti-doped GaAs epilayers grown on undoped GaAs (100) substrates

Yeong Ho WuiTae Won KangT.W Kim

Year: 1999 Journal:   Applied Surface Science Vol: 148 (3-4)Pages: 211-214   Publisher: Elsevier BV
Keywords:
Doping Materials science Impurity Deep-level transient spectroscopy Epitaxy Optoelectronics Analytical Chemistry (journal) Chemistry Silicon Nanotechnology

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Topics

Semiconductor materials and devices
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Silicon and Solar Cell Technologies
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Semiconductor materials and interfaces
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics

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