Deep levels in Ti-doped GaAs epilayers grown on undoped GaAs (100) substrates

Yeong Ho Wui; Tae Won Kang; T.W Kim

doi:10.1016/s0169-4332(99)00131-2

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Deep levels in Ti-doped GaAs epilayers grown on undoped GaAs (100) substrates

Yeong Ho Wui Tae Won Kang T.W Kim

Year: 1999 Journal: Applied Surface Science Vol: 148 (3-4)Pages: 211-214 Publisher: Elsevier BV

DOI: 10.1016/s0169-4332(99)00131-2

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Keywords:

Doping Materials science Impurity Deep-level transient spectroscopy Epitaxy Optoelectronics Analytical Chemistry (journal) Chemistry Silicon Nanotechnology

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Deep levels in Ti-doped GaAs epilayers grown on undoped GaAs (100) substrates

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