Optical properties of Cl-doped ZnSe epilayers grown on GaAs substrates

Brian Karrer; F. C. Peiris; Brenda L. VanMil; Ming Luo; N. C. Giles; T. H. Myers

doi:10.1007/s11664-005-0047-z

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Optical properties of Cl-doped ZnSe epilayers grown on GaAs substrates

Brian Karrer F. C. Peiris Brenda L. VanMil Ming Luo N. C. Giles T. H. Myers

Year: 2005 Journal: Journal of Electronic Materials Vol: 34 (6)Pages: 944-948 Publisher: Springer Science+Business Media

DOI: 10.1007/s11664-005-0047-z

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Keywords:

Ellipsometry Doping Materials science Refractive index Band gap Semiconductor Dielectric Prism Analytical Chemistry (journal) Optics Hall effect Wavelength Thin film Optoelectronics Chemistry Electrical resistivity and conductivity Physics Nanotechnology

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Chalcogenide Semiconductor Thin Films

Physical Sciences → Engineering → Electrical and Electronic Engineering

Quantum Dots Synthesis And Properties

Physical Sciences → Materials Science → Materials Chemistry

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Optical properties of Cl-doped ZnSe epilayers grown on GaAs substrates

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