Strain relaxation in selectively grown ZnSe-epilayers on patterned GaAs-substrates

L. Parthier; H Wissmann; M. von Ortenberg

doi:10.1016/0022-0248(95)00872-1

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Strain relaxation in selectively grown ZnSe-epilayers on patterned GaAs-substrates

L. Parthier H Wissmann M. von Ortenberg

Year: 1996 Journal: Journal of Crystal Growth Vol: 159 (1-4)Pages: 99-102 Publisher: Elsevier BV

DOI: 10.1016/0022-0248(95)00872-1

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Keywords:

Mesoscopic physics Reciprocal lattice Relaxation (psychology) Materials science Condensed matter physics Diffraction Stress relaxation Layer (electronics) Molecular beam epitaxy Crystallography Homogeneous Strain (injury) Lattice (music) Chemistry Optics Epitaxy Nanotechnology Composite material Physics

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Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Advanced Semiconductor Detectors and Materials

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Strain relaxation in selectively grown ZnSe-epilayers on patterned GaAs-substrates

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