Photoluminescent properties of undoped and Pr-doped GaAs epilayers

Gwo‐Cherng Jiang; Liann‐Be Chang; Gwo-Hsiung Chang; Luke Su Lu

doi:10.1016/0022-0248(95)00072-0

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Photoluminescent properties of undoped and Pr-doped GaAs epilayers

Gwo‐Cherng Jiang Liann‐Be Chang Gwo-Hsiung Chang Luke Su Lu

Year: 1995 Journal: Journal of Crystal Growth Vol: 152 (3)Pages: 127-134 Publisher: Elsevier BV

DOI: 10.1016/0022-0248(95)00072-0

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Keywords:

Photoluminescence Doping Exciton Acceptor Epitaxy Impurity Materials science Analytical Chemistry (journal) Shallow donor Condensed matter physics Chemistry Optoelectronics Nanotechnology Physics

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Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Quantum Dots Synthesis And Properties

Physical Sciences → Materials Science → Materials Chemistry

Photoluminescent properties of undoped and Pr-doped GaAs epilayers

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