Deep levels in GaAs heteroepitaxial layers grown on (100) Ge substrates by MOCVD

Yoshihiro Kobayashi; Kosuke Ikeda; Yukinobu Shinoda

doi:10.1049/el:19870171

ScienceGate Book Chapters

JOURNAL ARTICLE

Deep levels in GaAs heteroepitaxial layers grown on (100) Ge substrates by MOCVD

Yoshihiro Kobayashi Kosuke Ikeda Yukinobu Shinoda

Year: 1987 Journal: Electronics Letters Vol: 23 (5)Pages: 242-244 Publisher: Institution of Engineering and Technology

DOI: 10.1049/el:19870171

Get Full-Text PDF Get Analytical Report

Abstract

Deep levels in MOCVD-grown GaAs/(100)Ge were studied by the deep-level Fourier spectroscopy (DLFS) method. Single domain wafers contain EL2 similar to homoepitaxial wafers. EL2 was not observed in antiphase domain wafers, where detected deep traps were found to consist of more than two traps.

Keywords:

Metalorganic vapour phase epitaxy Wafer Materials science Optoelectronics Epitaxy Domain (mathematical analysis) Nanotechnology Layer (electronics) Mathematics

Metrics

Cited By

0.91

FWCI (Field Weighted Citation Impact)

Refs

0.77

Citation Normalized Percentile

Is in top 1%

Is in top 10%

Citation History

Topics

Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Deep levels in GaAs heteroepitaxial layers grown on (100) Ge substrates by MOCVD

Abstract

Metrics

Citation History

Topics

Related Documents

Deep Levels in GaAs Grown Using Superlattice Intermediate Layers on Si Substrates by MOCVD

ZnTe layers grown on GaAs substrates by low pressure MOCVD

Deep levels in Ti-doped GaAs epilayers grown on undoped GaAs (100) substrates

Self-aligned planar GaAs nanowires grown by MOCVD on GaAs (100) substrates

Distribution of deep levels in the GaAs layers of GaAs/AlxGa1−xAs heterostructures grown by MOCVD