Optoelectronic and electrochemical properties of nickel oxide (NiO) films deposited by DC reactive magnetron sputtering

B. Subramanian; M. Mohamed Ibrahim; V. Senthilkumar; K. R. Murali; V.S. Vidhya; C. Sanjeeviraja; M. Jayachandran

doi:10.1016/j.physb.2008.08.014

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Optoelectronic and electrochemical properties of nickel oxide (NiO) films deposited by DC reactive magnetron sputtering

B. Subramanian M. Mohamed Ibrahim V. Senthilkumar K. R. Murali V.S. Vidhya C. Sanjeeviraja M. Jayachandran

Year: 2008 Journal: Physica B Condensed Matter Vol: 403 (21-22)Pages: 4104-4110 Publisher: Elsevier BV

DOI: 10.1016/j.physb.2008.08.014

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Keywords:

Non-blocking I/O Nickel oxide Materials science Nickel Sputter deposition Optoelectronics Sputtering Cavity magnetron Oxide Electrochemistry Thin film Metallurgy Nanotechnology Electrode Chemistry

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Transition Metal Oxide Nanomaterials

Physical Sciences → Materials Science → Polymers and Plastics

Gas Sensing Nanomaterials and Sensors

Physical Sciences → Engineering → Electrical and Electronic Engineering

ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Optoelectronic and electrochemical properties of nickel oxide (NiO) films deposited by DC reactive magnetron sputtering

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