Crystallization Behavior of Sputtered Amorphous Silicon Films by Blue-Multi-Laser-Diode Annealing

Abstract

Semiconductor blue-multi-laser-diode annealing (BLDA) for amorphous silicon film prepared by radio frequency (RF) sputtering was performed to investigate the controllability of the crystallization behavior by changing the scanning velocity of BLDA ranging from 300 to 500 mm/s at a constant power of 3.4 W. From the evaluation results of polycrystallized Si films, crystallization occurred in solid phase under high temperature heating, and rather small grains of dendrite-like structure with distinctly preferred crystal orientation of (111) face was observed at the higher scanning velocity of 500 mm/s. On the other hand, crystallization occurred in liquid phase and randomly oriented rather larger grains with the size of 100–200 nm were observed for the scanning velocity at 300 mm/s. It was verified successfully that high crystallinity poly-Si films of arbitrary grain structure could be obtained by controlling the scanning velocity of BLDA.