Investigation of defect formation and electronic transport in microcrystalline silicon deposited by hot-wire CVD

Michael Stöger‐Pollach; A. Breymesser; V. Schlosser; M Ramadori; V Plunger; D Peiró; C. Voz; J. Bertomeu; Michael Nelhiebel; P. Schattschneider; J. Andreu

doi:10.1016/s0921-4526(99)00568-2

JOURNAL ARTICLE

Investigation of defect formation and electronic transport in microcrystalline silicon deposited by hot-wire CVD

Michael Stöger‐Pollach A. Breymesser V. Schlosser M Ramadori V Plunger D Peiró C. Voz J. Bertomeu Michael Nelhiebel P. Schattschneider J. Andreu

Year: 1999 Journal: Physica B Condensed Matter Vol: 273-274 Pages: 540-543 Publisher: Elsevier BV

DOI: 10.1016/s0921-4526(99)00568-2

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Keywords:

Materials science Silicon Substrate (aquarium) Chemical vapor deposition Microcrystalline silicon Phase (matter) Transmission electron microscopy Microcrystalline Epitaxy Analytical Chemistry (journal) Scanning electron microscope Raman spectroscopy Optoelectronics Composite material Optics Crystalline silicon Nanotechnology Chemistry Crystallography

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Silicon Nanostructures and Photoluminescence

Physical Sciences → Materials Science → Materials Chemistry

Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Nanowire Synthesis and Applications

Physical Sciences → Engineering → Biomedical Engineering

Investigation of defect formation and electronic transport in microcrystalline silicon deposited by hot-wire CVD

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