Microcrystalline silicon deposited by the hot-wire CVD technique

J. Guillet; Chisato Niikura; J.E. Bourée; Jean‐Paul Kleider; Christophe Longeaud; R. Brüggemann

doi:10.1016/s0921-5107(99)00412-2

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Microcrystalline silicon deposited by the hot-wire CVD technique

J. Guillet Chisato Niikura J.E. Bourée Jean‐Paul Kleider Christophe Longeaud R. Brüggemann

Year: 2000 Journal: Materials Science and Engineering B Vol: 69-70 Pages: 284-288 Publisher: Elsevier BV

DOI: 10.1016/s0921-5107(99)00412-2

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Keywords:

Silane Chemical vapor deposition Diborane Photoconductivity Materials science Amorphous silicon Silicon Nanocrystalline silicon Dichlorosilane Photocurrent Amorphous solid Silanes Germane Microcrystalline Deposition (geology) Plasma-enhanced chemical vapor deposition Hydrogen Analytical Chemistry (journal) Crystalline silicon Optoelectronics Chemistry Composite material Crystallography Germanium Organic chemistry Boron

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Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon Nanostructures and Photoluminescence

Physical Sciences → Materials Science → Materials Chemistry

Microcrystalline silicon deposited by the hot-wire CVD technique

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