On the properties of AlN thin films grown by low temperature reactive r.f. sputtering

Li Xinjiao; Xu Zechuan; Ziyou He; Cao Huazhe; Su Wuda; Chen Zhongcai; Feng Zhou; Wang Enguang

doi:10.1016/0040-6090(86)90056-8

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On the properties of AlN thin films grown by low temperature reactive r.f. sputtering

Li Xinjiao Xu Zechuan Ziyou He Cao Huazhe Su Wuda Chen Zhongcai Feng Zhou Wang Enguang

Year: 1986 Journal: Thin Solid Films Vol: 139 (3)Pages: 261-274 Publisher: Elsevier BV

DOI: 10.1016/0040-6090(86)90056-8

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Keywords:

Materials science Sputtering Annealing (glass) Thin film Electrical resistivity and conductivity Dielectric Refractive index Analytical Chemistry (journal) Band gap Mineralogy Composite material Optoelectronics Chemistry Nanotechnology

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Acoustic Wave Resonator Technologies

Physical Sciences → Engineering → Biomedical Engineering

GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

High voltage insulation and dielectric phenomena

Physical Sciences → Materials Science → Materials Chemistry

On the properties of AlN thin films grown by low temperature reactive r.f. sputtering

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