Control of Schottky barrier height by thin high-doped layer

T. Hariu; Yukio Shibata

doi:10.1109/proc.1975.9986

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Control of Schottky barrier height by thin high-doped layer

T. Hariu Yukio Shibata

Year: 1975 Journal: Proceedings of the IEEE Vol: 63 (10)Pages: 1523-1524 Publisher: Institute of Electrical and Electronics Engineers

DOI: 10.1109/proc.1975.9986

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Abstract

Possible ways of controlling Schottky barrier height for a given material are discussed. The values of doping density and thickness of the high-doped layer in metal-n ⁺ (thin)-n structure for the required barrier height are given.

Keywords:

Schottky barrier Doping Barrier layer Layer (electronics) Materials science Schottky effect Optoelectronics Metal Rectangular potential barrier Nanotechnology Metallurgy

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Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Integrated Circuits and Semiconductor Failure Analysis

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon Nanostructures and Photoluminescence

Physical Sciences → Materials Science → Materials Chemistry

Control of Schottky barrier height by thin high-doped layer

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