Rare earth doped high barrier height Schottky devices

Liann‐Be Chang; H.T Wang; Y.C. Cheng; Ta-Wei Shong; Ein-Kuang Lin

doi:10.1016/s0026-2692(98)00174-8

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Rare earth doped high barrier height Schottky devices

Liann‐Be Chang H.T Wang Y.C. Cheng Ta-Wei Shong Ein-Kuang Lin

Year: 1999 Journal: Microelectronics Journal Vol: 30 (6)Pages: 521-526 Publisher: Elsevier BV

DOI: 10.1016/s0026-2692(98)00174-8

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Keywords:

Doping Materials science Schottky barrier Rare earth Earth (classical element) Optoelectronics Engineering physics Electrical engineering Engineering Physics Metallurgy Astronomy

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Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Advanced Semiconductor Detectors and Materials

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Rare earth doped high barrier height Schottky devices

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