Schottky-barrier devices with low barrier height

Kenji Kajiyama; S. Sakata; Y. Mizushima

doi:10.1109/proc.1974.9614

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Schottky-barrier devices with low barrier height

Kenji Kajiyama S. Sakata Y. Mizushima

Year: 1974 Journal: Proceedings of the IEEE Vol: 62 (9)Pages: 1287-1288 Publisher: Institute of Electrical and Electronics Engineers

DOI: 10.1109/proc.1974.9614

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Abstract

It is calculated that the barrier height of the Schottky diode has an optimum value of ∼0.3 V for the detector, the harmonic generator, and the frequency converter at high frequency. The low barrier height can be realized by the mixed crystal (n-type) composed of InAs (i.e., In x Ga 1-x As,InAs y P 1-y , and In x Ga 1-x As y P 1-y ).

Keywords:

Schottky diode Physics Diode Optoelectronics

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Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Advanced Semiconductor Detectors and Materials

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Schottky-barrier devices with low barrier height

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