Control of GaAs Schottky Barrier Height by Ultrathin MBE Si Interface Control Layer

Ken-ichi Koyanagi; Seiya Kasai; Hideki Hasegawa

doi:10.7567/ssdm.1992.a-5-5

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Control of GaAs Schottky Barrier Height by Ultrathin MBE Si Interface Control Layer

Ken-ichi Koyanagi Seiya Kasai Hideki Hasegawa

Year: 1992

DOI: 10.7567/ssdm.1992.a-5-5

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Keywords:

Materials science Schottky barrier Optoelectronics Layer (electronics) Interface (matter) Gallium arsenide Metal–semiconductor junction Schottky diode Silicon Nanotechnology Composite material

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Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Control of GaAs Schottky Barrier Height by Ultrathin MBE Si Interface Control Layer

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