Barrier Height Control and Current Transport in GaAs and InP Schottky Diodes Having An Ultrathin Silicon Interface Control Layer

Hideki Hasegawa; Ken-ichi Koyanagi; Seiya Kasai

doi:10.1016/b978-0-444-81889-8.50036-5

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Barrier Height Control and Current Transport in GaAs and InP Schottky Diodes Having An Ultrathin Silicon Interface Control Layer

Hideki Hasegawa Ken-ichi Koyanagi Seiya Kasai

Year: 1994 Elsevier eBooks Pages: 187-192 Publisher: Elsevier BV

DOI: 10.1016/b978-0-444-81889-8.50036-5

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Keywords:

Schottky barrier Optoelectronics Thermionic emission Materials science Schottky diode Layer (electronics) Silicon Metal–semiconductor junction Diode Current (fluid) Blocking (statistics) Nanotechnology Electrical engineering Electron Engineering Computer science Physics Computer network

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Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Silicon Nanostructures and Photoluminescence

Physical Sciences → Materials Science → Materials Chemistry

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Barrier Height Control and Current Transport in GaAs and InP Schottky Diodes Having An Ultrathin Silicon Interface Control Layer

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