Barrier height enhancement of the Schottky barrier diode using a thin uniformly-doped surface layer

Ching-Yuan Wu

doi:10.1016/0038-1101(81)90102-7

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Barrier height enhancement of the Schottky barrier diode using a thin uniformly-doped surface layer

Ching-Yuan Wu

Year: 1981 Journal: Solid-State Electronics Vol: 24 (9)Pages: 857-862 Publisher: Elsevier BV

DOI: 10.1016/0038-1101(81)90102-7

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Keywords:

Schottky barrier Doping Materials science Barrier layer Schottky diode Optoelectronics Diode Layer (electronics) Semiconductor Rectangular potential barrier Metal–semiconductor junction Voltage Condensed matter physics Nanotechnology Electrical engineering Physics

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Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Integrated Circuits and Semiconductor Failure Analysis

Physical Sciences → Engineering → Electrical and Electronic Engineering

Barrier height enhancement of the Schottky barrier diode using a thin uniformly-doped surface layer

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