Understanding crystal growth mechanisms in silicon–germanium (SiGe) nanostructures

Maki Suemitsu; S. Filimonov

doi:10.1533/9780857091420.2.45

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Understanding crystal growth mechanisms in silicon–germanium (SiGe) nanostructures

Maki Suemitsu S. Filimonov

Year: 2011 Elsevier eBooks Pages: 45-71 Publisher: Elsevier BV

DOI: 10.1533/9780857091420.2.45

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Keywords:

Epitaxy Materials science Germanium Crystal growth Silicon Crystallization Crystal (programming language) Mechanism (biology) Nanostructure Nanotechnology Relaxation (psychology) Engineering physics Crystallography Chemical physics Condensed matter physics Optoelectronics Thermodynamics Chemistry Physics Computer science

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Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Understanding crystal growth mechanisms in silicon–germanium (SiGe) nanostructures

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