Strain engineering of silicon–germanium (SiGe) micro- and nanostructures

Fabio Pezzoli; Christoph Deneke; Oliver G. Schmidt

doi:10.1533/9780857091420.2.247

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Strain engineering of silicon–germanium (SiGe) micro- and nanostructures

Fabio Pezzoli Christoph Deneke Oliver G. Schmidt

Year: 2011 Elsevier eBooks Pages: 247-295 Publisher: Elsevier BV

DOI: 10.1533/9780857091420.2.247

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Keywords:

Heterojunction Materials science Silicon-germanium Strain engineering Germanium Optoelectronics Engineering physics Nanostructure Silicon Strain (injury) Nanotechnology Engineering

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Nanowire Synthesis and Applications

Physical Sciences → Engineering → Biomedical Engineering

Advancements in Semiconductor Devices and Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Strain engineering of silicon–germanium (SiGe) micro- and nanostructures

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