BOOK-CHAPTER
Silicon–germanium (SiGe) crystal growth using molecular beam epitaxy
Year: 2011 Elsevier eBooks Pages: 83-116 Publisher: Elsevier BV
Keywords:
Molecular beam epitaxy Materials science Nanostructure Germanium Nanometre Silicon Epitaxy Nanotechnology Atomic units Crystal (programming language) Optoelectronics Composite material
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4
Cited By
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FWCI (Field Weighted Citation Impact)
56
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0.10
Citation Normalized Percentile
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Citation History
Topics
Semiconductor Quantum Structures and Devices
Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics
Advancements in Semiconductor Devices and Circuit Design
Physical Sciences → Engineering → Electrical and Electronic Engineering
Semiconductor materials and devices
Physical Sciences → Engineering → Electrical and Electronic Engineering
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