High-Resolution TEM Evaluation of InAs/InP Strained Layer Superlattices Grown on (001)InAs Substrates by Atomic Layer Epitaxy

Osamu Ueda; Yoshiki Sakuma; Masashi Ozeki; N. Ohtsuka; K. Nakajima

doi:10.1016/b978-0-444-81889-8.50097-3

ScienceGate Book Chapters

BOOK-CHAPTER

High-Resolution TEM Evaluation of InAs/InP Strained Layer Superlattices Grown on (001)InAs Substrates by Atomic Layer Epitaxy

Osamu Ueda Yoshiki Sakuma Masashi Ozeki N. Ohtsuka K. Nakajima

Year: 1994 Elsevier eBooks Pages: 531-536 Publisher: Elsevier BV

DOI: 10.1016/b978-0-444-81889-8.50097-3

Get Full-Text PDF Get Analytical Report

Keywords:

Superlattice Materials science Monolayer Layer (electronics) Epitaxy Substrate (aquarium) Atomic layer epitaxy Transmission electron microscopy Stacking Optoelectronics Crystallography Condensed matter physics Nanotechnology Chemistry

Metrics

Cited By

0.00

FWCI (Field Weighted Citation Impact)

Refs

0.08

Citation Normalized Percentile

Is in top 1%

Is in top 10%

Topics

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Advanced Semiconductor Detectors and Materials

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

High-Resolution TEM Evaluation of InAs/InP Strained Layer Superlattices Grown on (001)InAs Substrates by Atomic Layer Epitaxy

Metrics

Topics

Related Documents

InAs/InP short-period strained-layer superlattices grown by atomic layer epitaxy

Atomic layer epitaxy of InP and InAs/InP heterostructures

High resolution electron microscopy of InAs/GaAs strained-layer superlattices

Electronic structure of strained-layer AlAs/InAs (001) superlattices

Structural analysis of InAs/GaAs strained-layer superlattices grown by migration enhanced epitaxy